Sub-40-nm half-pitch double patterning with resist freezing process

Sub-40-nm half-pitch double patterning with resist freezing process

著者名:

M. Hori ( JSR Corp., Japan )
T. Nagai ( JSR Corp., Japan )
A. Nakamura ( JSR Corp., Japan )
T. Abe ( JSR Corp., Japan )
G. Wakamatsu ( JSR Corp., Japan )

掲載資料名:

Advances in resist materials and processing technology XXV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6923

発行年:

2008

巻:

1

開始ページ:

69230H-1

終了ページ:

69230H-8

総ページ数:

8

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471086 [0819471089]

言語:

英語

請求記号:

P63600/6923

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052554
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in Resist Materials and Processing Technology
回次:	2008 : 25th
会議開催地:	San Jose, California, USA
会議開催年:	2008.02.25-2008.02.27
論文注記:	Advances in resist materials and processing technology XXV, 25-27 February 2008, San Jose, California, USA. Session 4. Materials and Processes for Double Patterning/Double Exposure, 69230H, 6923-17

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