Structural defects and degradation of high-power pure-blue GaN-based laser diodes

Structural defects and degradation of high-power pure-blue GaN-based laser diodes

著者名:

S. Tomiya ( Sony Corp., Japan )
O. Goto ( Sony Corp., Japan )
M. Ikeda ( Sony Corp., Japan )

掲載資料名:

Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6894

発行年:

2008

開始ページ:

68940N-1

終了ページ:

68940N-6

総ページ数:

6

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470690 [0819470694]

言語:

英語

請求記号:

P63600/6894

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052525
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2008 : 3rd
会議開催地:	San Jose, California, USA
会議開催年:	2008.01.21-2008.01.24
論文注記:	Gallium nitride materials and devices III, 21-24 January 2008, San Jose, California, USA - Session 6. Lasers, Invited paper (68940N/6894-22)

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