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A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy (HVPE)

著者名:
掲載資料名:
Gallium nitride materials and devices III
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6894
発行年:
2008
開始ページ:
689406-1
終了ページ:
689406-9
総ページ数:
9
出版情報:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470690 [0819470694]
言語:
英語
請求記号:
P63600/6894
資料種別:
国際会議録

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