Plasma-induced damage in GaN-based light emitting diodes

Plasma-induced damage in GaN-based light emitting diodes

著者名:

Y. Li ( Institute of Semiconductors, China )
X. Yi ( Institute of Semiconductors, China )
X. Wang ( Institute of Semiconductors, China )
J. Guo ( Institute of Semiconductors, China )
L. Wang ( Engineering Research Ctr. for Semiconductor Lighting, China )

掲載資料名:

Solid state lighting and solar energy technologies : 12-14 November 2007, Beijing, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6841

発行年:

2008

パート:

A

開始ページ:

68410X-1

終了ページ:

68410X-6

総ページ数:

6

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470164 [0819470163]

言語:

英語

請求記号:

P63600/6841

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052472
シリーズID:	PA00000029
会議名:	Photonics Asia : Solid State Lighting and Solar Energy Technologies
回次:	2007
会議開催地:	Beijing, China
会議開催年:	2007.11.12-2007.11.14
論文注記:	Solid state lighting and solar energy technologies, 12-14 November 2007, Beijing, China - Part A. Solid state lighting, Poster Session (68410X/6841A-27)

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