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Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes

著者名:
  • Z. Liu ( Research & Development Ctr. for Semiconductor Lighting, China )
  • D. Guo ( Research & Development Ctr. for Semiconductor Lighting, China )
  • X. Yi ( Research & Development Ctr. for Semiconductor Lighting, China )
  • Y. Chen ( Research & Development Ctr. for Semiconductor Lighting, China )
  • L. Wang ( Research & Development Ctr. for Semiconductor Lighting, China )
掲載資料名:
Solid state lighting and solar energy technologies : 12-14 November 2007, Beijing, China
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6841
発行年:
2008
パート:
A
開始ページ:
68410N-1
終了ページ:
68410N-4
総ページ数:
4
出版情報:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470164 [0819470163]
言語:
英語
請求記号:
P63600/6841
資料種別:
国際会議録

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