Fabrication of lnGaN quantum dots by periodically interrupted growth in MOCVD

Fabrication of lnGaN quantum dots by periodically interrupted growth in MOCVD

著者名:

S. -K. Choi ( Kookmin Univ., South Korea )
J. -M. Jang ( Kookmin Univ., South Korea )
S. -H. Yi ( Kookmin Univ., South Korea )
J. -A. Kim ( Kookmin Univ., South Korea )
W. -G. Jung ( Kookmin Univ., South Korea )

掲載資料名:

Nanophotonics, nanostructure, and nanometrology II : 12-14 November 2007, Beijing, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6831

発行年:

2008

開始ページ:

683119-1

終了ページ:

683119-8

総ページ数:

8

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470065 [0819470066]

言語:

英語

請求記号:

P63600/6831

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052462
シリーズID:	PA00000029
会議名:	Photonics Asia : Nanophotonics, Nanostructure, and Nanometrology
回次:	2007 : 2nd
会議開催地:	Beijing, China
会議開催年:	2007.11.12-2007.11.14
論文注記:	Nanophotonics, nanostructure, and nanometrology II, 12-14 November 2007, Beijing, China - Poster Session (683119/6831-28)

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