Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: effects of nano-structural features
- 著者名:
- Z. S. Lee ( National Taiwan Univ., Taiwan )
- Z. C. Feng ( National Taiwan Univ., Taiwan )
- H. Tsai ( National Taiwan Univ., Taiwan )
- J. Yang ( National Taiwan Univ., Taiwan )
- A. G. Li ( ShenZhen Fangda GuoKe Optronics Technical Co. Ltd, China )
- 掲載資料名:
- Manufacturing LEDs for lighting and displays : 10-11 September 2007, Berlin, Germany
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6797
- 発行年:
- 2008
- 開始ページ:
- 67970S-1
- 終了ページ:
- 67970S-12
- 総ページ数:
- 12
- 出版情報:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819469656 [0819469653]
- 言語:
- 英語
- 請求記号:
- P63600/6797
- 資料種別:
- 国際会議録
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5
国際会議録
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
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