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Recombination lifetime characterization and mapping of p-i-n InP/Ln0.53Ga0.47As/InP mesa structure using the microwave photoconductivity decay (µ-PCD) technique

著者名:
  • X. Wu ( Shanghai Institute of Technical Physics (China) )
  • K. Zhang ( Shanghai Institute of Technical Physics (China) )
  • Y. Huang ( Shanghai Institute of Technical Physics (China) )
  • H. Tang ( Shanghai Institute of Technical Physics (China) )
  • B. Han ( Shanghai Institute of Technical Physics (China) )
掲載資料名:
International Symposium on Photoelectronic Detection and Imaging 2007, photoelectronic imaging and detection : 9-12 September 2007, Beijing China
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6621
発行年:
2008
開始ページ:
66211C-1
終了ページ:
66211C-6
総ページ数:
6
出版情報:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819467638 [0819467634]
言語:
英語
請求記号:
P63600/6621
資料種別:
国際会議録

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