Highly Reliable Passivation Layer for a-InGaZnO Thin-film Transistors Fabricated Using Polysilsesquioxane

Highly Reliable Passivation Layer for a-InGaZnO Thin-film Transistors Fabricated Using Polysilsesquioxane

著者名:

Juan Paolo Bermundo ( Nara Institute of Science and Technology, Ikoma, Japan )
Yasuaki Ishikawa
Haruka Yamazaki
Toshiaki Nonaka ( AZ Electronic Materials Manufacturing Japan K.K., Kakegawa-shi, Japan )
Yukiharu Uraoka ( Nara Institute of Science and Technology, Ikoma, Japan )

掲載資料名:

Oxide semiconductors : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1633

発行年:

2014

開始ページ:

139

終了ページ:

144

総ページ数:

6

出版情報:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781605116105 [1605116106]

言語:

英語

請求記号:

M23500/1633

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052298
シリーズID:	PA00000011
会議名:	Oxide Semiconductors
回次:	2013
会議開催地:	Boston, Massachusetts, U.S.A.
会議開催年:	2013.12.01-2013.12.06
論文注記:	2013 MRS Fall Meeting, Symposium R December 1-6, 2013, Boston, Massachusetts, USA ; Device issues

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