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GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms

著者名:
掲載資料名:
Reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II : symposium held April 9-13, 2012, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
1432
発行年:
2012
開始ページ:
119
終了ページ:
130
総ページ数:
12
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781605114095 [160511409X]
言語:
英語
請求記号:
M23500/1432
資料種別:
国際会議録

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