Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy

Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy

著者名:

掲載資料名:

Compound semiconductors for energy applications and environmental sustainability--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1324

発行年:

2012

開始ページ:

3

終了ページ:

8

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113012 [1605113018]

言語:

英語

請求記号:

M23500/1324

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051867
シリーズID:	PA00000011
会議名:	2011 MRS Spring Meeting ; Symposium D, Compound Semiconductors for Energy Applications and Environmental Sustainability
回次:	2011
会議開催地:	San Francisco, CA
会議開催年:	2011.04.25-2011.04.29

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