HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation

HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation

著者名:

掲載資料名:

Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-27

発行年:

2003

開始ページ:

3

終了ページ:

15

総ページ数:

13

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774123 [1566774128]

言語:

英語

請求記号:

E23400/200327

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051854
シリーズID:	PA00000028
会議名:	Seventh International Symposium on Low Temperature Electronics ; International Symposium on Low Temperature Cofired Ceramic Based Electronic Devices ; Annual Meeting of the Electrochemical Society
回次:	2003
会議開催地:	Orlando, FL
会議開催年:	2003.10.12-2003.10.16

類似資料:

1 国際会議録 Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at … Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Clacys, C., van Meer, H., De Meyer, K. Electrochemical Society	7 国際会議録 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society
2 国際会議録 Comparison Between 0.13 μm Partially-Depleted Silicon-On-Insulator Technology with Floating Body Operation at 300 K and 90 K Pavanello, M.A., Martino, J.A., Mercha, A., Rafi, J.M., Simoen, E., Claeys, C., van Meer, H., De Meyer, K. Electrochemical Society	8 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
3 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	9 国際会議録 Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective M. A. Pavanello, J. A. Martino, E. Simoen, R. Rooyackers, N. Collaert, C. Claeys Electrochemical Society
4 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	10 国際会議録 Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point L.M. Camillo, J.A. Martino, E. Simoen, C. Claeys Electrochemical Society
5 国際会議録 A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Claeys, C., Dc Meyer, K. Electrochemical Society	11 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society
6 国際会議録 Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	12 国際会議録 Substrate Current Characteristics of Partially Depleted SOI n-MOSFETs from Room Temperature down to Liquid Helium Temperatures Simoen, E., Claeys, C. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12