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Seed Layer Free Ruthenium Precursor for MOCVD

著者名:
掲載資料名:
Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2002-28
発行年:
2002
開始ページ:
277
終了ページ:
286
総ページ数:
10
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773959 [1566773954]
言語:
英語
請求記号:
E23400/200228
資料種別:
国際会議録

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