Characteristics of High-K Gd<sub>2</sub>O<sub>3</sub> Films Deposited on Different Orientation of Si Substrate

Characteristics of High-K Gd₂O₃ Films Deposited on Different Orientation of Si Substrate

著者名:

掲載資料名:

Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-28

発行年:

2002

開始ページ:

93

終了ページ:

104

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773959 [1566773954]

言語:

英語

請求記号:

E23400/200228

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051851
シリーズID:	PA00000028
会議名:	International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
回次:	2002
会議開催地:	Salt Lake City, UT
会議開催年:	2002.10.20-2002.10.24

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Characteristics of High-K Gd2O3 Films Deposited on Different Orientation of Si Substrate

類似資料:

Characteristics of High-K Gd₂O₃ Films Deposited on Different Orientation of Si Substrate