BE-SOI WITH ETCH STOP LAYERS GROWN BY RTCVD

BE-SOI WITH ETCH STOP LAYERS GROWN BY RTCVD

著者名:

D. Feijóo

掲載資料名:

Proceedings of the Second International Symposium on Semiconductor Wafer Bonding--Science, Technology, and Applications

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-29

発行年:

1993

開始ページ:

267

終了ページ:

279

総ページ数:

13

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770682 [1566770688]

言語:

英語

請求記号:

E23400/940556

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051847
シリーズID:	PA00000028
会議名:	Second International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ; Hawaii Meeting of the Elactrochemical Society
回次:	2nd ; 1993
会議開催地:	HI
会議開催年:	1993.05.16-1993.05.21

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