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The Enhanced Mobility of a Highly Strained d-doped In0.9Ga0.1 P/ln0.75Ga0.25As/ln0.53Ga0.47As/lnP High Electron Mobility Transistor

著者名:
掲載資料名:
Proceedings of the Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII)
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1993-27
発行年:
1993
巻:
1993-27
開始ページ:
364
終了ページ:
368
総ページ数:
5
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770699 [1566770696]
言語:
英語
請求記号:
E23400/940142
資料種別:
国際会議録

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