The Enhanced Mobility of a Highly Strained d-doped In0.9Ga0.1 P/ln0.75Ga0.25As/ln0.53Ga0.47As/lnP High Electron Mobility Transistor

The Enhanced Mobility of a Highly Strained d-doped In_0.9Ga_0.1 P/ln_0.75Ga_0.25As/ln_0.53Ga_0.47As/lnP High Electron Mobility Transistor

著者名:

掲載資料名:

Proceedings of the Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-27

発行年:

1993

開始ページ:

364

終了ページ:

368

総ページ数:

5

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770699 [1566770696]

言語:

英語

請求記号:

E23400/940142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051845
シリーズID:	PA00000028
会議名:	Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII) : 183rd Meeting of The Electrochemical Society
回次:	18th ; 183rd
会議開催地:	Honolulu, HI
会議開催年:	1993.05.16-1993.05.21

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