Hot-Carrier Degradation of p- and n-Type Si MOSTs Stressed at Liquid Helium Temperature

Hot-Carrier Degradation of p- and n-Type Si MOSTs Stressed at Liquid Helium Temperature

著者名:

掲載資料名:

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-22

発行年:

1993

開始ページ:

30

終了ページ:

39

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770712 [1566770718]

言語:

英語

請求記号:

E23400/932474

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051840
シリーズID:	PA00000028
会議名:	The Second Symposium on Low Temperature Electronics and High Temperature Superconductivity ; 183rd Meetings of the Elactrochemical Society
回次:	2nd ; 183rd
会議開催地:	Honolulu, HI
会議開催年:	1993.05.16-1993.05.21

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