Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO₂ and High-k Dielectrics

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO₂ and High-k Dielectrics

著者名:

掲載資料名:

Materials and devices for end-of-roadmap and beyond CMOS scaling : symposium held April 5-9, 2010, San Francisco, California

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1252

発行年:

2010

開始ページ:

55

終了ページ:

60

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112299 [1605112291]

言語:

英語

請求記号:

M23500/1252

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00050337
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium I
回次:	2010
会議開催地:	San Francisco, California, USA
会議開催年:	2010.04.05-2010.04.09

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