Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
- 著者名:
M. Dudley S. Byrappa H. Wang F. Wu Y. Zhang B. Raghothamachar G. Choi E.K. Sanchez D. Hansen R. Drachev M.J. Loboda - 掲載資料名:
- Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1246
- 発行年:
- 2010
- 開始ページ:
- 29
- 終了ページ:
- 36
- 総ページ数:
- 8
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605112237 [1605112232]
- 言語:
- 英語
- 請求記号:
- M23500/1246
- 資料種別:
- 国際会議録
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11
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Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
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