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Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

著者名:
M. Dudley
S. Byrappa
H. Wang
F. Wu
Y. Zhang
B. Raghothamachar
G. Choi
E.K. Sanchez
D. Hansen
R. Drachev
M.J. Loboda
さらに 6 件
掲載資料名:
Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
1246
発行年:
2010
巻:
1246
開始ページ:
29
終了ページ:
36
総ページ数:
8
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112237 [1605112232]
言語:
英語
請求記号:
M23500/1246
資料種別:
国際会議録

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