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Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals

著者名:
Avinash Gupta
Ping Wu
Varatharajan Rengarajan
Xueping Xu
Murugesu Yoganathan
Chris Martin
Ejiro Emorhokpor
Andy Souzis
Ilya Zwieback
Tom Anderson
さらに 5 件
掲載資料名:
Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
1246
発行年:
2010
巻:
1246
開始ページ:
3
終了ページ:
14
総ページ数:
12
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112237 [1605112232]
言語:
英語
請求記号:
M23500/1246
資料種別:
国際会議録

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