Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

著者名:

Sheng-Chun Hung

掲載資料名:

III-nitride materials for sensing, energy conversion and controlled light-matter interactions : symposium held November 29-December 3, 2009, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1202

発行年:

2010

開始ページ:

59

終了ページ:

66

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111759 [1605111759]

言語:

英語

請求記号:

M23500/1202

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00050320
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	2009
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2009.11.29-2009.12.03

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