Al₂O₃ as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD | 東京工業大学附属図書館文献データベース

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Al₂O₃ as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

著者名:

William E. Fenwick

Chung-Lung Huang

Christopher Summers

さらに 4 件

掲載資料名:

Zinc oxide and related materials--2009 : symposium held November 30-December 3, 2009, Boston, Massachusetts, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1201

発行年:

2010

開始ページ:

179

終了ページ:

184

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111742 [1605111740]

言語:

英語

請求記号:

M23500/1201

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00050319
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	2009
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2009.11.30-2009.12.03

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