Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon
- 著者名:
- 掲載資料名:
- Reliability and materials issues of semiconductor optical and electrical devices and materials : symposium held November 29 - December 3, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1195
- 発行年:
- 2010
- 開始ページ:
- 291
- 終了ページ:
- 298
- 総ページ数:
- 8
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605111681 [1605111686]
- 言語:
- 英語
- 請求記号:
- M23500/1195
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation
Materials Research Society |
Electrochemical Society |
Materials Research Society | |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society | |
Electrochemical Society |