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Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation

著者名:
掲載資料名:
Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
1108
発行年:
2009
開始ページ:
237
終了ページ:
242
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110806 [1605110809]
言語:
英語
請求記号:
M23500/1108
資料種別:
国際会議録

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