Nucleation and Stochiometry Dependence of Rutile-TiO₂(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- 著者名:
- 掲載資料名:
- Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1108
- 発行年:
- 2009
- 開始ページ:
- 175
- 終了ページ:
- 180
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605110806 [1605110809]
- 言語:
- 英語
- 請求記号:
- M23500/1108
- 資料種別:
- 国際会議録
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11
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Growth of Nonpolar GaN(1100) Films and Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
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