Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods | 東京工業大学附属図書館文献データベース

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Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods

著者名:

Junjiroh Kikawa

Masamitsu Kaneko

Tatsuya Fujishima

Kentaro Chikamatsu

Atsushi Yamaguchi

Yasushi Nanishi

さらに 4 件

掲載資料名:

Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1108

発行年:

2009

開始ページ:

157

終了ページ:

162

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110806 [1605110809]

言語:

英語

請求記号:

M23500/1108

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049377
シリーズID:	PA00000011
会議名:	Materials Research Society meeting ; Symposium on performance and reliability of semiconductor devices
回次:	2008
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2008.11.30-2008.12.03

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