Ion Implantation for LOW-Resistive Source/Drain Contacts in Finfet Devices

Ion Implantation for LOW-Resistive Source/Drain Contacts in Finfet Devices

著者名:

Mark J. H. van Dal

掲載資料名:

Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1070

発行年:

2008

開始ページ:

67

終了ページ:

78

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110400 [160511040X]

言語:

英語

請求記号:

M23500/1070

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049373
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

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