Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl | 東京工業大学附属図書館文献データベース

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Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl

著者名:

Michael Mazzola

さらに 5 件

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

169

終了ページ:

174

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

類似資料:

1 国際会議録 High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCI J. Zhang, J. Mazzola, S.G. Sunkari, G. Stewart, P.B. Klein Trans Tech Publications	7 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications
2 国際会議録 High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications Jie Zhang, Janice Mazzola, Esteban Romano, Carl Hoff, Mike Mazzola, Janna Casady, Jeff Casady Materials Research Society	8 国際会議録 Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC R.L. Myers-Ward, B.L. VanMil, R.E. Stahlbush, S.L. Katz, J.M. McCrate Trans Tech Publications
3 国際会議録 Uniformity and Morphology of 10 x 100mm 4 ° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance H. Das, S. Sunkari, T. Oldham, J. Rodgers, J. Casady Trans Tech Publications	9 国際会議録 In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth Zhang, J., Kordina, O., Ellison, A., Janzen, E. Trans Tech Publications
4 国際会議録 Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina Trans Tech Publications	10 国際会議録 In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth Zhang, J., Kordina, O., Ellison, A., Janzen, E. Trans Tech Publications
5 国際会議録 High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC H. Das, S.G. Sunkari, T. Oldham, J.R.B. Casady, J.B. Casady Trans Tech Publications	11 国際会議録 Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski, J.D. Caldwell Trans Tech Publications
6 国際会議録 Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers S.G. Sunkari, H. Das, C. Hoff, Y. Koshka, J.R.B. Casady Trans Tech Publications	12 国際会議録 Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications

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