Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

著者名:

M. J. O'Loughlin

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

115

終了ページ:

122

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

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2 国際会議録 SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications	8 国際会議録 Multi-wafer VPE growth of highly uniform SiC epitaxial layers O'Loughlin, M. J., Nordby, H. D. Jr., Burk, A. A. Jr. MRS-Materials Research Society
3 国際会議録 Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications	9 国際会議録 Extremely Uniform, High Quality, SIC Epitaxy on 100-mm Substrates J.J. Sumakeris, J. Henning, M.J. O'Loughlin, S. Sriram, V. Balakrishna Trans Tech Publications
4 国際会議録 Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., … Trans Tech Publications	10 国際会議録 Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization R.T. Leonard, M.J. Paisley, S. Bubel, J.J. Sumakeris, A.R. Powell, Y. Khlebnikov, J.C. Seaman, J. Ambati, A.A. Burk, … Trans Tech Publications
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