Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

著者名:

Yi Chen

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

77

終了ページ:

82

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

類似資料:

1 国際会議録 Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial … Yi Chen, Michael Dudley, Kendrick X. Liu, Robert E. Stahlbush Materials Research Society	7 国際会議録 Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski, J.D. Caldwell Trans Tech Publications
2 国際会議録 Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers Y. Chen, X.R. Huang, N. Zhang, M. Dudley, J.D. Caldwell Trans Tech Publications	8 国際会議録 Process-Induced Deformations and Stacking Faults in 4H-SiC Robert S. Okojie, Xianrong Huang, Michael Dudley, Ming Zhang, Pirouz Pirouz Materials Research Society
3 国際会議録 Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC Yi Chen, Ning Zhang, Xianrong Huang, Govindhan Dhanaraj, Edward Sanchez, Michael F. MacMillan, Michael Dudley Materials Research Society	9 国際会議録 Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu Trans Tech Publications
4 国際会議録 Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy Kendrick X. Liu, Robert E. Stahlbush, Joshua D. Caldwell, Karl D. Hobart, Francis J. Kub, Joseph J. Sumakeris Materials Research Society	10 国際会議録 Characterization of SiC Epilayers Using High-Resolution X-ray Diffraction and Synchrotron Topography Imaging Huang, Xianrong, Dudley, Michael, Okojie, Robert S. Materials Research Society
5 国際会議録 Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC Joshua David Caldwell, Paul B. Klein, Orest J. Glembocki, Robert E. Stahlbush, Kendrick X. Liu, Karl D. Hobart, Fritz … Materials Research Society	11 国際会議録 Sense Determination of c-Axis Screw Dislocations in 4H-SiC Y. Chen, X.R. Huang, G. Dhanaraj, M. Dudley, E.K. Sanchez Trans Tech Publications
6 国際会議録 Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes Joshua David Caldwell, Robert E. Stahlbush, Eugene A. Imhoff, Orest J. Glembocki, Karl D. Hobart, Marko J. Tadjer, … Materials Research Society	12 国際会議録 Multiplication of Basal Plane Dislocations via Interaction With c-Axis Threading Dislocations in 4H-SiC Yi Chen, Govindhan Dhanaraj, Michael Dudley, Hui Zhang, Ronghui Ma, Yevgeniy Shishkin, Stephen E. Saddow Materials Research Society

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