Effect of Graded AlxGa₁₋xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

Effect of Graded AlxGa₁₋xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

著者名:

KungLiang Lin

掲載資料名:

Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1068

発行年:

2008

開始ページ:

117

終了ページ:

122

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110387 [1605110388]

言語:

英語

請求記号:

M23500/1068

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049371
シリーズID:	PA00000011
会議名:	Materials Research Society meeting ; Symposium on advances in GaN, GaAs, SiC and related alloys on silicon substrates
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.24-2008.05.28

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