Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility
- 著者名:
Hiroshi Kambayashi Yuki Niiyama Shinya Ootomo Takehiko Nomura Masayuki Iwami Yoshihiro Satoh Sadahiro Kato Seikoh Yoshida - 掲載資料名:
- Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1068
- 発行年:
- 2008
- 開始ページ:
- 27
- 終了ページ:
- 32
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605110387 [1605110388]
- 言語:
- 英語
- 請求記号:
- M23500/1068
- 資料種別:
- 国際会議録
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