Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

著者名:

G. Guegan

掲載資料名:

Silicon-on-insulator technology and devices 13

シリーズ名:

ECS transactions

シリーズ巻号:

6(4)

発行年:

2007

開始ページ:

165

終了ページ:

172

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

言語:

英語

請求記号:

E23400/6-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047128
シリーズID:	PA00000034
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	13th ; 211th
会議開催地:	Chicago, Illinois, USA
会議開催年:	2007.05.06-2007.05.11

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