Heavy Ion Induced Upset Cross-Sections of 150nm SOI CMOS SRAMs Fabricated in UNIBOND

Heavy Ion Induced Upset Cross-Sections of 150nm SOI CMOS SRAMs Fabricated in UNIBOND

著者名:

掲載資料名:

Silicon-on-insulator technology and devices 13

シリーズ名:

ECS transactions

シリーズ巻号:

6(4)

発行年:

2007

開始ページ:

51

終了ページ:

58

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

言語:

英語

請求記号:

E23400/6-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047128
シリーズID:	PA00000034
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	13th ; 211th
会議開催地:	Chicago, Illinois, USA
会議開催年:	2007.05.06-2007.05.11

類似資料:

1 国際会議録 Estimating proton induced SEU cross section of SOI CMOS SRAMS Liu, S.T., Liu, H., Nelson, D.K., Flanery, M., Hughes, H.L. Electrochemical Society	7 国際会議録 Unibond SOI wafers achieved by Smart-Cut process Bruel, M., Aspar, B., Maleville, C., Moriceau, H., Auberton-Herve, A.J., Barge, T. Electrochemical Society
2 国際会議録 Radiation response of SOI CMOS translstors/4M SRAMs fabricated in UNIBOND substrates Liu, S.T., Heikkila, W., Golke, K., Stinger, B., Flanery, M., Hurst, A., Panning, G., Kirchner, G., Jenkins, W.C. Electrochemical Society	8 国際会議録 Unibond SOI Wafers Achieved by Smart-Cut Process Bruel, M., Aspar, B., Maleville, C., Moriceau, H., Auberton-Herve, A.J., Barge, T. Electrochemical Society
3 国際会議録 Screening SIMOX wafers' background doping for SOI CMOS SRAM production Yue, J., Liou, H.K., Liu, S.T. Electrochemical Society	9 国際会議録 193-nm single-layer process for 150-nm technology generation and below Amblard, G. R., Zandbergen, P., McCallum, M., Stephen, A., Byers, J. D., Dean, K. R., Meute, J., Nelson, C. M. SPIE - The International Society of Optical Engineering
4 国際会議録 Total dose radiation induced back channel threshold voltage shifts and standby currents of CMOS devices fabricated in Unibond materials Liu, S.T., Jenkins, W., Huhes, H., Auberton-Herve, A.J. Electrochemical Society	10 国際会議録 Electrical properties of UNIBOND material Crisroloveanu, S, lonescn, A, Maleville, C, Munteaun, D, Gil, M, Aspw, B, Bruel, M, Auberton-Herve, A J Electrochemical Society
5 国際会議録 Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabrication Fritze,M., Burns,J.M., Wyatt,P.W., Astolfi,D.K., Forte,T., Yost,D., Davis,P., Curtis,A.V., Preble,D.M., Cann,S.G., … SPIE - The International Society for Optical Engineering	11 国際会議録 High performance SOI technology for sub-45nm gate length CMOS manufacturing Invited Horstmann, M., Greenlaw, D., Huebler, P., Stephan, R., Feudel, Th., Wei, A., Frohberg, K., Hoentschel, J., Javorka, P., … Electrochemical Society
6 国際会議録 Germanium on double-SOI photodetectors for 1550-nm operation Dosunmu, O.I., Cannon, D.D., Emsley, M.K., Ghyselen, B., Liu, J., Kimerling, L.C., UEnlue, M. S. SPIE - The International Society of Optical Engineering	12 国際会議録 Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography Park, J.-S., Kim, S.-H., Shin, I.-K., Choi, S.-W., Sohn, J.-M., Lee, J.-H., Shin, H.-S., Laidig, T.L., Van den Broeke, … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12