High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films | 東京工業大学附属図書館文献データベース

Blank Cover Image

High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films

著者名:

S. Cristoloveanu

さらに 8 件

掲載資料名:

Silicon-on-insulator technology and devices 13

シリーズ名:

ECS transactions

シリーズ巻号:

6(4)

発行年:

2007

開始ページ:

33

終了ページ:

38

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

言語:

英語

請求記号:

E23400/6-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047128
シリーズID:	PA00000034
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	13th ; 211th
会議開催地:	Chicago, Illinois, USA
会議開催年:	2007.05.06-2007.05.11

類似資料:

1 国際会議録 Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features T.P. Ernst, F. Andrieu, O. Weber, J. Hartmann, C. Dupre Electrochemical Society	7 国際会議録 Total dose radiation hardness of double-gate ultra-thin SOI MOSFETs Cirba, C.R., Cristoloveanu, S., Schrimpf, R.D., Feldman, L.C., Fleetwood, D.M., Galloway, K.F. Electrochemical Society
2 国際会議録 Advanced SOI MOSFETs: structures and device physics Invited Faynot, O., Vandooren, A., Ritzenthaler, R., Poiroux, T., Lolivier, J., Jahan, C., Barraud, S., Ernst, T., Andrieu, F., … Electrochemical Society	8 国際会議録 Adaptation of Ψ-MOSFET techniques for ultra thin SOI Bresson, N., Allibert, F., Cristoloveanu, S. Electrochemical Society
3 国際会議録 Fully Depleted Silicon-on-Insulator nMOSFETs with Tensile Strained High Carbon Content Sil-yCy Channels F. Ducroquet, J. Hartmann, C. Tabone, D. Lafond, C. Vizioz, T. P. Ernst, S. Deleonibus Electrochemical Society	9 国際会議録 Characterization and modeling of advanced SOI materials and devices Allibert, F., Pretet, J., Ernst, T., Jomaah, J., Cristoloveanu, S. Kluwer Academic Publishers
4 国際会議録 Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology Ghyselen, B., Bogumilowicz, Y., Aulnette, C., Abbadie, A., Osternaud, B., Besson, P., Daval, N., Andrieu, F., … Materials Research Society	10 国際会議録 Temperature and magnetic field dependence of the carrier mobility in SOI wafers by the pseudo-MOSFET method Rossel, C., Halley, D., Cristoloveanu, S. Electrochemical Society
5 国際会議録 9 Structure and thermal evolution of small clusters found after ultralow-energy high-dose boron implantation in Si Hebras, X., Cristiano, F., Cherkash, N., Lerch, W., Paul, S., Pawlalr, B., Surdeano, R., Claverie, A. Electrochemical Society	11 国際会議録 Delineation of crystallographic defects in ultra thin SIMOX materials produced by low energy low dose oxygen implantation Giles, L.F., Meyyappan, N., Nejim, A., Blake, J., Cristiano, F., Hemment, P.L.F. Electrochemical Society
6 国際会議録 Mobility Characterization by Magnetoresistance in Ultra Thin SOI Ring-FETs T. V. Chandrasekhar Rao, S. Cristoloveanu, J. Antoszewski, T. Nguyen, H. Hovel, P. Genlil, L. Faraone Electrochemical Society	12 国際会議録 Impact of the Schottky contacts on characterization of ultra-thin SOI pseudo-MOS transistors Sato, S., Komiya, K., Bresson, N., Omura, Y., Cristoloveanu, S. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12