The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric

The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric

著者名:

掲載資料名:

Silicon nitride, silicon dioxide, and emerging dielectrics 9

シリーズ名:

ECS transactions

シリーズ巻号:

6(3)

発行年:

2007

開始ページ:

167

終了ページ:

184

総ページ数:

18

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775526 [1566775523]

言語:

英語

請求記号:

E23400/6-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047127
シリーズID:	PA00000034
会議名:	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics ; Meeting of The Electrochemical Society
回次:	9th ; 211th
会議開催地:	Chicago, IL, USA
会議開催年:	2007.05.06-2007.05.11

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