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Structure and Stability of Small Self-interstitial Clusters in Si: Prediction by First Principles-based Monte Carlo Simulations

著者名:
掲載資料名:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
シリーズ名:
ECS transactions
シリーズ巻号:
6(1)
発行年:
2007
開始ページ:
339
終了ページ:
344
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775502 [1566775507]
言語:
英語
請求記号:
E23400/6-1
資料種別:
国際会議録

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