Recent Advances in Search for Suitable High-k/Metal Gate Solutions to Replace SiON/Poly-Silicon Gate Stacks in CMOS Devices for 45nm and Beyond Technologies
- 著者名:
B. Linder V. Paruchuri V. Narayanan E. Cartier N. Bojarczuk S. Guha S. Brown Y. Wang - 掲載資料名:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 6(1)
- 発行年:
- 2007
- 開始ページ:
- 287
- 終了ページ:
- 294
- 総ページ数:
- 8
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775502 [1566775507]
- 言語:
- 英語
- 請求記号:
- E23400/6-1
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
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8
国際会議録
14 On Location and Magnitude of Trapped Charge in Poly-Si ALD-Al2O3 Capped Hf-Silicate Gate Stacks
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
SPIE - The International Society of Optical Engineering |