Fabrication of InP/SiO2/Si Substrate using Ion-Cuffing Process and Selective Chemical Etching

Fabrication of InP/SiO2/Si Substrate using Ion-Cuffing Process and Selective Chemical Etching

著者名:

P. Chen

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

6(1)

発行年:

2007

開始ページ:

99

終了ページ:

104

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

言語:

英語

請求記号:

E23400/6-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047125
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	3rd ; 211th
会議開催地:	Chicago, IL, USA
会議開催年:	2007.05.06-2007.05.10

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