Series Resistance Influence on the Linear Kink Effect in Twin-Gate Partially Depleted SOI nMOSFETs

Series Resistance Influence on the Linear Kink Effect in Twin-Gate Partially Depleted SOI nMOSFETs

著者名:

掲載資料名:

Microelectronics Technology and Devices : SBMICRO 2006

シリーズ名:

ECS transactions

シリーズ巻号:

4(1)

発行年:

2006

開始ページ:

293

終了ページ:

300

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775120 [1566775124]

言語:

英語

請求記号:

E23400/4-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047123
シリーズID:	PA00000034
会議名:	International Symposium on Microelectronics Technology and Devices : SBMicro
回次:	21th : 2006
会議開催地:	Ouro Preto, MG, Brazil
会議開催年:	2006.08.28-2006.09.01

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1 国際会議録 Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs Agopian, P. G., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	7 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
2 国際会議録 Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	8 国際会議録 The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs P. G. DerAgopian, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society
3 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	9 国際会議録 Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society
4 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society	10 国際会議録 Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology Salvador Pinillos Gimenez, Rodrigo Mazzutti, Gomes Ferreira, João Antonio Martino Electrochemical Society
5 国際会議録 The "C" Shape Behavior of the Floating Body Effect in Function of Temperature in PD SOI nMOSFETs P. G. Agopian, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society	11 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
6 国際会議録 Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point L.M. Camillo, J.A. Martino, E. Simoen, C. Claeys Electrochemical Society	12 国際会議録 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society

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