Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates | 東京工業大学附属図書館文献データベース

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Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates

著者名:

C. R. Abernathy

さらに 7 件

掲載資料名:

State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7

シリーズ名:

ECS transactions

シリーズ巻号:

3(5)

発行年:

2006

開始ページ:

141

終了ページ:

150

総ページ数:

10

出版情報:

Pennington, N.J: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775052 [1566775051]

言語:

英語

請求記号:

E23400/3-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047113
シリーズID:	PA00000034
会議名:	Meeting of the Electrochemical Society
回次:	210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

類似資料:

1 国際会議録 Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor Gila, B., Onstine, A.H., Hlad, M, Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, S., Anderson, T., … Electrochemical Society	7 国際会議録 Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy Onstine, A.H., Gila, B.P., Kim, J., Stodilka, D., Allums, K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society
2 国際会議録 Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS Gila, B.P., Lambers, E., Luo, B., Onstine, A.H., Allums, K.K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society	8 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society
3 国際会議録 Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application D. O. Stodilka, A. P. Gerger, M. Hlad, P. Kumar, B. P. Gila, R. Singh, C. R. Abernathy, S. J. Pearton, F. Ren Materials Research Society	9 国際会議録 Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., … Materials Research Society
4 国際会議録 Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors T. Anderson, B. P. Gila, M. Hiad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. … Electrochemical Society	10 国際会議録 Growth of Scandium Magnesium Oxide on GaN Onstine, A. H., Herrero, A., Gila, B. P., Kim, J., Mehandru, R., Abernathy, C. R., Ren, F., Pearton, S. J. Materials Research Society
5 国際会議録 AlGaN/GaN-based Metal-Oxide Semiconductor Dipole-based Hydrogen Gas Sensor Kang, B. S., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J. Electrochemical Society	11 国際会議録 The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation Gila, B. P., Luo, B., Kim, J., Mehandru, R., LaRoche, J. R., Onstine, A. H., Lambers, E., Siebein, K., Abernathy, C. R., … Materials Research Society
6 国際会議録 Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society	12 国際会議録 Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors Abernathy, C.R., Gila, B.P., Onstine, A.H., Pearton, S.J., Kim, J., Luo, B., Mehandru, R., Ran, F., Gillespie, J.K., … Electrochemical Society

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