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Evaluation of Trisilylamine for HfSiO x Atomic Layer Deposition

著者名:
掲載資料名:
Physics and technology of high-k gate dielectrics 4
シリーズ名:
ECS transactions
シリーズ巻号:
3(3)
発行年:
2006
開始ページ:
441
終了ページ:
448
総ページ数:
8
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775038 [1566775035]
言語:
英語
請求記号:
E23400/3-3
資料種別:
国際会議録

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