The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection
- 著者名:
J. Kim T. Park M. Cho M. Seo J. Jang C. Hwang - 掲載資料名:
- Physics and technology of high-k gate dielectrics 4
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 3(3)
- 発行年:
- 2006
- 開始ページ:
- 435
- 終了ページ:
- 440
- 総ページ数:
- 6
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775038 [1566775035]
- 言語:
- 英語
- 請求記号:
- E23400/3-3
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society | |
Trans Tech Publications | |
Electrochemical Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering | |
Electrochemical Society |
11
国際会議録
TuD3:Crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films
SPIE - The International Society for Optical Engineering |
Electrochemical Society |
12
国際会議録
28 Growth and characterization of Al2O3:HfO2 nanolaminate films deposited by Atomic Layer Deposition
Electrochemical Society |