Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies | 東京工業大学附属図書館文献データベース

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Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies

著者名:

さらに 8 件

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

3(2)

発行年:

2006

開始ページ:

233

終了ページ:

246

総ページ数:

14

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775021 [1566775027]

言語:

英語

請求記号:

E23400/3-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047110
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2nd ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.02

類似資料:

1 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society	7 国際会議録 RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and … A. Lauwers, J. Kittl, K. Maex Trans Tech Publications
2 国際会議録 METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society	8 国際会議録 Ni Silicide Morphology On Small Features Chamirian, Oxana, Lauwers, Anne, Kittl, Jorge A., Dal, Mark Van, Potter, Muriel De, Vrancken, Christa, Lindsay, Richard, … Materials Research Society
3 国際会議録 28 Self-aligned PtSi Fully Silicided (FUST) Metal Gates for 45 nm CMOS Applications van Dal, M.J.H., Lauwers, A., Cunniffe, J., Verbeeck, R., Vrancken, C., Demeurisse, C., Dao, T., Tamminga, Y., Veloso, … Electrochemical Society	9 国際会議録 Applications of Ni-Based Silicides to 45 nm CMOS and Beyond Kittl, Jorge A., Lauwers, Anne, Chamirian, Oxana, Pawlak, Malgorzata A., Dal, Mark Van, Akheyar, Amal, Potter, Muriel … Materials Research Society
4 国際会議録 Study of Ni-Silicide Contacts to Si:C Source/Drain. S. Mertens, Y. Cho, F. Nouri, R. Schreutelkamp, Y. Kim, P. Verheyen, J. Steenbergen, C. Vrancken, H. Bender, O. Richard, … Electrochemical Society	10 国際会議録 SELECTIVE REMOVAL OF Ni FOR SALICIDATION AND FULLY SILICIDED GATES K. Kraus, V. Fano Leston, J. Snow, K. Xu, M. de Potter de ten Broeck, A. Lauwers, P. W. Mertens, F. Kovacs Electrochemical Society
5 国際会議録 22 Silicide scaling: Co, Ni or CoNi? Lauwers, A., Kitti, IA., Akheyar, A., Van Dal, M, Chamirian, O., de Potter, M, Lindsay, R., Muex, K. Electrochemical Society	11 国際会議録 23 Ni-based silicides: material issues for advanced CMOS applications Kittl, J.A., Lauwers, A., Chamirian, O., Van Dal, M, Akheyar, A., Richard, O., Lisoni, J.G., De Potter, M, Lindsay, R., … Electrochemical Society
6 国際会議録 26 Co-silicide, Co(Ni)-silicide and Ni-silicide to source¥drain contact resistance Akheyar, A., Lauwers, A., Kitti, J.A., De Potter, M, Chamirian, O., Jonckheere, R., Leunissen, P., van Dal, M, Lindsay, … Electrochemical Society	12 国際会議録 Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application M. Niwa, R. Mitsuhashi, S. Hayashi, K. Yamamoto, Y. Harada, M. Kubota, A. Rothchild, T. Hoffmann, S. Kubicek, S. … Electrochemical Society

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