First Principles Calculation for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal

First Principles Calculation for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal

著者名:

掲載資料名:

Silicon materials science and technology X

シリーズ名:

ECS transactions

シリーズ巻号:

2(2)

発行年:

2006

開始ページ:

261

終了ページ:

274

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774390 [156677439X]

言語:

英語

請求記号:

E23400/2-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047107
シリーズID:	PA00000034
会議名:	International Symposium on Silicon Materials Science and Technology : Meeting of the Electrochemical Society
回次:	10th ; 209th
会議開催地:	Denver, CO, USA
会議開催年:	2006.05.07-2006.05.12

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