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Defect Formation Behaviors in Heavily Doped Czochralski Silicon

著者名:
掲載資料名:
Silicon materials science and technology X
シリーズ名:
ECS transactions
シリーズ巻号:
2(2)
発行年:
2006
開始ページ:
95
終了ページ:
108
総ページ数:
14
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774390 [156677439X]
言語:
英語
請求記号:
E23400/2-2
資料種別:
国際会議録

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