The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

著者名:

掲載資料名:

Microelectronics Technology and Devices : SBMICRO 2007

シリーズ名:

ECS transactions

シリーズ巻号:

9(1)

発行年:

2007

開始ページ:

305

終了ページ:

312

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775656 [1566775655]

言語:

英語

請求記号:

E23400/9-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047130
シリーズID:	PA00000034
会議名:	International Symposium on Microelectronics Technology and Devices : SBMicro
回次:	22nd : 2007
会議開催地:	Rio deJaneiro, Brazil
会議開催年:	2007.09.03-2007.09.06

類似資料:

1 国際会議録 The "C" Shape Behavior of the Floating Body Effect in Function of Temperature in PD SOI nMOSFETs P. G. Agopian, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society	7 国際会議録 Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society
2 国際会議録 Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs Agopian, P. G., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	8 国際会議録 Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET Paiola, A. G., Nicolett, A, S., Martino, J. A. Electrochemical Society
3 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	9 国際会議録 Series Resistance Influence on the Linear Kink Effect in Twin-Gate Partially Depleted SOI nMOSFETs Paula Agopian, João Martino, Eddy Simoen, Cor Claeys Electrochemical Society
4 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	10 国際会議録 The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures Nicolett, A.S., Martino, J.A., Simoen, F., Claeys, C. Electrochemical Society
5 国際会議録 Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society	11 国際会議録 Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society
6 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society	12 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society

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