Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective

Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective

著者名:

M. A. Pavanello

掲載資料名:

Microelectronics Technology and Devices : SBMICRO 2007

シリーズ名:

ECS transactions

シリーズ巻号:

9(1)

発行年:

2007

開始ページ:

19

終了ページ:

28

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775656 [1566775655]

言語:

英語

請求記号:

E23400/9-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047130
シリーズID:	PA00000034
会議名:	International Symposium on Microelectronics Technology and Devices : SBMicro
回次:	22nd : 2007
会議開催地:	Rio deJaneiro, Brazil
会議開催年:	2007.09.03-2007.09.06

類似資料:

1 国際会議録 Temperature Influences on FinFETs with Undoped Body M. A. Pavanello, J. A. Martino, E. Simoen, R. Rocyackers, N. Collaert, C. Claeys Electrochemical Society	7 国際会議録 Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society
2 国際会議録 Evaluation of Triple-Gate Finfets with High-k Dielectrics and TiN Gate Material Under Analog Operation Marcelo Pavanello, Joao Martino, Eddy Simoen, Rita Rooyackers, Nadine Collaert, Cor Claeys Electrochemical Society	8 国際会議録 Influence of the N-Type FinFET Width on the Zero Temperature Coefficient M. Bellodi, J. A. Martino, L. M. Camiio, E. Simoen, C. Claeys Electrochemical Society
3 国際会議録 Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs M.A. Pavanello, J.A. Martino, E. Simoen, R. Rooyackers, N. Collaert Electrochemical Society	9 国際会議録 Sidewall Angle Influence on the FinFET Analog Parameters R. Giacomini, J. A. Martino, M. A. Pavanello Electrochemical Society
4 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society	10 国際会議録 A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Claeys, C., Dc Meyer, K. Electrochemical Society
5 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	11 国際会議録 Comparison Between 0.13 μm Partially-Depleted Silicon-On-Insulator Technology with Floating Body Operation at 300 K and 90 K Pavanello, M.A., Martino, J.A., Mercha, A., Rafi, J.M., Simoen, E., Claeys, C., van Meer, H., De Meyer, K. Electrochemical Society
6 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	12 国際会議録 Simple Analytical Model to Study the ZTC Bias Point in FinFETs M. Bellodi, L. Camillo, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society

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