Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics | 東京工業大学附属図書館文献データベース

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Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics

著者名:

さらに 9 件

掲載資料名:

Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing

シリーズ名:

ECS transactions

シリーズ巻号:

2(1)

発行年:

2006

開始ページ:

63

終了ページ:

78

総ページ数:

16

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774383 [1566774381]

言語:

英語

請求記号:

E23400/2-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047106
シリーズID:	PA00000034
会議名:	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
回次:	2nd ; 209th
会議開催地:	Denver, Colorado. USA
会議開催年:	2004.05.07-2004.05.12

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